Periodically Poled Crystals and Modules
Bulk Ultrafast PPLN crystals
HC Photonics - PPLN (Periodically-Poled Lithium Niobate) bulk chips for ultrafast lasers
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Model | Geometry | Period (µm) | Length (mm) | Price |
---|---|---|---|---|
FSHVIS-MB-0.3 | multiple | 6.13-6.29 | 0.3 | PoR |
FSHVIS-MB-0.5 | multiple | 6.13-6.29 | 0.5 | PoR |
FSHVIS-MB-1 | multiple | 6.13-6.29 | 1 | PoR |
FSHVIS-MC-0.3 | multiple | 6.45-6.75 | 0.3 | PoR |
FSHVIS-MC-0.5 | multiple | 6.45-6.75 | 0.5 | PoR |
FSHVIS-MC-1 | multiple | 6.45-6.75 | 1 | PoR |
FSHVIS-MD-0.3 | multiple | 6.83-7.00 | 0.3 | PoR |
FSHVIS-MD-0.5 | multiple | 6.83-7.00 | 0.5 | PoR |
FSHVIS-MD-1 | multiple | 6.83-7.00 | 1 | PoR |
FSHVIS-ME-0.3 | multiple | 8.15-8.65 | 0.3 | PoR |
FSHVIS-ME-0.5 | multiple | 8.15-8.65 | 0.5 | PoR |
FSHVIS-ME-1 | multiple | 8.15-8.65 | 1 | PoR |
FSHVIS-MF-0.3 | multiple | 8.90-9.45 | 0.3 | PoR |
FSHVIS-MF-0.5 | multiple | 8.90-9.45 | 0.5 | PoR |
FSHVIS-MF-1 | multiple | 8.90-9.45 | 1 | PoR |
FSHNIR-MA-0.3 | multiple | 18.20-20.90 | 0.3 | PoR |
FSHNIR-MA-0.5 | multiple | 18.20-20.90 | 0.5 | PoR |
FSHNIR-MA-1 | multiple | 18.20-20.90 | 1 | PoR |
FSHNIR-MB-0.3 | multiple | 28.40-33.60 | 0.3 | PoR |
FSHNIR-MB-0.5 | multiple | 28.40-33.60 | 0.5 | PoR |
FSHNIR-MB-1 | multiple | 28.40-33.60 | 1 | PoR |
FSFVIS-MA-0.3 | multiple | 6.90-8.10 | 0.3 | PoR |
FSFVIS-MA-0.5 | multiple | 6.90-8.10 | 0.5 | PoR |
FSFVIS-MA-1 | multiple | 6.90-8.10 | 1 | PoR |
FSFVIS-MB-0.3 | multiple | 11.25-12.45 | 0.3 | PoR |
FSFVIS-MB-0.5 | multiple | 11.25-12.45 | 0.5 | PoR |
FSFVIS-MB-1 | multiple | 11.25-12.45 | 1 | PoR |
FOPMIR-MA-0.3 | multiple | 27.58-31.59 | 0.3 | PoR |
FOPMIR-MA-0.5 | multiple | 27.58-31.59 | 0.5 | PoR |
FOPMIR-MA-1 | multiple | 27.58-31.59 | 1 | PoR |
Summary Box:
HC Photonics - PPLN (Periodically-Poled Lithium Niobate) bulk chips for ultrafast lasersDescription:
HC Photonics provides standard PPLN bulk chips designed for the common laser applications. You can find the list of standard PPLN bulk chips with application wavelengths ranging from visible to mid-IR generation, based on up-conversion (SHG/SFG) and down-conversion (DFG/OPA/OPG/OPO) frequency mixing configurations and uniform/multiple/fan-out QPM structures. These standard chips are for applications in ultrafast pulsed systems with pulse durations shorter than ns. For longer pulses and CW lasers please see the Standard bulk PPLN range. Please note the length quoted below refers to the length of the poled region, the physical length of all crystals is 1mm.- Standard-in-stocks for your “quick plug-in” nonlinear frequency mixing applications
- Available for up-conversion (SHG/SFG) and down-conversion (DFG/OPA/OPG/OPO) frequency mixing configurations
- available for visible to mid-IR generation; also contact us for UV and THz
- available for uniform/multiple/fan-out QPM structures
Specifications:
type | sub type | Source | Input (nm) | Output (nm) | QPM period (um) | Temperature (deg. C) | AR coating | Length (mm) | crossection (mm2) | Applications | walk-off (ps/mm) |
FSHVIS | MB | Yb3+ fiber family | 1020-1040 | 510-520 | 6.13, 6.16, 6.19, 6.23, 6.26, 6.29 | 30-200 | S1/S2 @485-590(R<0.5%) /970-1180(R<0.5%) nm | 0.3/0.5/1* | 9.6x0.5 | Holography/Microscopy/Life science/Display/Medical | 0.6~0.9 |
MC | 1040-1070 | 520-535 | 6.45, 6.51, 6.57, 6.63, 6.69, 6.75 | ||||||||
MD | 1060-1085 | 529-542 | 6.83, 6.86, 6.90, 6.93, 6.96, 7.00 | ||||||||
ME | Extend Yb3+ /Raman amplifier | 1120-1150 | 560-575 | 8.15, 8.25, 8.35, 8.45, 8.55, 8.65 | |||||||
MF | 1150-1180 | 575-590 | 8.90, 9.01, 9.12, 9.23, 9.34, 9.45 | ||||||||
FSHNIR | MA | Telecom/Er3+ fiber family | 1520~1620 | 760~810 | 18.20,18.50, 18.80, 19.10, 19.40, 19.70, 20.00, 20.30, 20.60, 20.90 | S1/S2 @750-810(R<0.5%) /1500-1620(R<0.5%) nm | 14.0x1.0 | Atom cooling/3D micro-fabrication/Microscopy/THz Generation | ~0.3 | ||
MB | Tm+/Ho+ fiber family | 1925~2300 | 962.5~1150 | 28.40, 29.00, 29.60, 30.20, 30.80, 31.40, 32.00, 32.60, 33.20 ,33.60 | S1/S2 @960-1150(R<0.5%) /1925-2300(R<0.5%) nm | 14.0x1.0 | Metrolegy | ~0.1 | |||
FSFVIS | MA | Ti:Sapphire + Telecom | 775~845/1550 | 516~544 | 6.90, 7.10, 7.30, 7.50, 7.70, 8.10 | S1/S2 @470~550(R<0.5%)/ 720~850 (R<0.5%)/ 1480~1590 (R<0.5%) nm | 9.6x0.5 | Holography/Microscopy/Life science/Display/Medical | - | ||
MB | Telecom+Yb3+ | 1520-1620/1064 | 625-642 | 11.25, 11.49, 11.73, 11.97, 12.21, 12.45 | S1/S2@625~642(R<0.5%)/ 1020~1080(R<0.5%)/ 1520~1620 (R<0.5%) nm | 9.6x1.0 | Visible communication/Atom cooling and trapping/Display | - | |||
FOPMIR | MA | Yb3+ /YAG | 1064 | 1400~2128/2128~4433 | 27.58,27.91, 28.28, 28.67, 29.08, 29.52, 29.98, 30.49, 31.02, 31.59 | S1/S2 @1030~1080(R<1.0%)/1380~1800 (R<1.0%)/2600~4800(R<5%) nm | 14.0x1.0 | OPCPA/fs OPO/Microscopy | - |
Downloads:
Product Specifications-FSHNIR-MA
Product Specifications-FSHNIR-MB
Product Specifications-FSHNIR-TM
Product Specifications-FSHVIS-MC
Product Specifications-FSHVIS-MD
Product Specifications-FSHVIS-ME
Product Specifications-FSHVIS-MF
Product Specifications-FSHVIS-YT
Product Specifications-FSFVIS-MB
Product Specifications-FSHNIR -FA
Product Specifications-FSHNIR -FB
Product Specifications-FSHNIR-ER
Product Specifications-FOPMIR -FA
Product Specifications-FOPMIR -FB
Product Specifications-FOPMIR-MA