Tornos Micro 770-795 nm Optical Isolator
EOT's TORNOS Micro optical isolator is designed to be integrated inside a standard butterfly package diode laser for wide-ranging applications where optical feedback adversely affects performance. Our isolators provide high transmission in the forward direction while strongly attenuating light traveling in the reverse direction, protecting lasers from the destructive effects of back reflections.
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| Model | Spectral range | Isolation | Power handling | Price |
|---|---|---|---|---|
| TORNOS-Micro-770 | 770nm to 790nm | >30dB | 300mW | PoR |
| TORNOS-Micro-775 | 775nm to 795nm | >30dB | 300mW | PoR |
Summary Box:
EOT's TORNOS Micro optical isolator is designed to be integrated inside a standard butterfly package diode laser for wide-ranging applications where optical feedback adversely affects performance. Our isolators provide high transmission in the forward direction while strongly attenuating light traveling in the reverse direction, protecting lasers from the destructive effects of back reflections.
Description:
The TORNOS Micro is unmatched in size and performance in the visible and near-IR wave ranges. With a package size of only 5 mm x 5 mm, this isolator is ideal for butterfly packages, TO cans, or any application in which space is at a premium. Placing the isolator inside the butterfly package allows the beam to pass through the isolator in free space before being coupled into fiber. This provides all the benefits of an optical isolator without suffering from losses due to splicing and recoupling the fiber. The TORNOS Micro is currently available for wavelengths at 780 nm and 785 nm.
The selection of Faraday material coupled with optically contacted polarizing beam splitter cubes results in much higher transmission compared to other isolators available in a similar size. The industry-leading high transmission allows for a new wave of applications to be developed where previously the absorptive losses prohibited functional, large-scale deployment.
Some common applications for the TORNOS Micro are the elimination of frequency instability in single frequency lasers, the prevention of mode-hopping in external cavity diode lasers, the elimination of parasitic oscillations due to ASE in amplified laser systems, cold atom research, atomic clocks, and laser cooling and tweezing applications to name a few.
Please contact us if you require an additional waveplate for polarisation manipulation.
Specifications:
| Standard Wavelength | Spectral Range | Isolation | Transmission | Power Handling | |
| 1 mm | 780 nm | 770 nm to 790 nm | ≥30 dB | ≥85% | 300 mW |
| 1 mm | 785 nm | 775 nm to 795 nm | ≥30 dB | ≥85% | 300 mW |
