GaAs and variants
ET 3000 InGaAs PIN Detector
ET-3000/3010 2GHz indium gallium arsnide (InGaAs) biased photodetectors covering 800-1700nm, ideal for monitoring the output of Q-switched lasers; mode-locked lasers; and externally modulated CW lasers, with time domain and frequency response measurements.
Regular price
$414.00
| Model | Wavelength range (nm) | Rise/Fall time | Dark Current | Price | Order |
|---|---|---|---|---|---|
| ET-3000 | 800-1700 | <175ps/<175ps | <2.0nA | $414.00 | |
| ET-3010 | 800-1700 | <175ps/<175ps | <3.0nA | $470.00 |
Summary Box:
ET-3000/3010 2GHz indium gallium arsnide (InGaAs) biased photodetectors covering 800-1700nm, ideal for monitoring the output of Q-switched lasers; mode-locked lasers; and externally modulated CW lasers, with time domain and frequency response measurements.Description:
- EOT's InGaAs Photodetectors contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current. When terminated into 50Ω into an oscilloscope, the pulsewidth of a laser can be measured. When terminated into 50Ω into a spectrum analyzer, the frequency response of a laser can be measured. EOT's InGaAs Photodetectors come with their own internal bias supply consisting of long-life lithium cells. Plugging a coaxial cable into the photodetector's BNC output connector and terminating into 50Ω at the oscilloscope or spectrum analyzer is all that is required for operation.
Specificatons:
|
Specifications |
120-10034-0001 (ET-3000) |
120-10050-0001 (ET-3010) |
|
Rise Time/Fall Time |
<175ps/<175ps |
<175ps/<175ps |
|
Responsivity at 1300nm |
0.9A/W |
0.9A/W |
|
Power Supply |
6VDC |
6VDC |
|
Bandwidth |
>2GHz |
>2GHz |
|
Active Area Diameter |
100µm |
100µm |
|
Dark Current |
<2.0nA |
<3.0nA |
|
Acceptance Angle (1/2 angle) |
20° |
N/A |
|
Noise Equivalent Power |
<0.03pW/√Hz |
<0.03pW/√Hz |
|
Maximum Linear Rating |
CW current: 5mA |
CW current: 5mA |
|
Mounting (Tapped Holes) |
8-32 or M4 |
8-32 or M4 |
|
Output Connector |
BNC |
BNC |
