ET 2030A Silicon Amplified PIN Detector
Silicon

ET 2030A Silicon Amplified PIN Detector

EOT's 2GHz amplified sub-nanosecond photodetectors, ideal for monitoring the output of high repetition rate, externally modulated CW lasers.
Regular price £335.00 £0.00
Model Wavelength range (nm) Rise/Fall time Bandwidth Price Order
ET-2030A 300-1100nm <500ps/<500ps 30kHz—1.2GHz £335.00

Summary Box:

EOT's 2GHz amplified sub-nanosecond photodetectors, ideal for monitoring the output of high repetition rate, externally modulated CW lasers.

Description:

EOT’s <2GHz Amplified Photodetectors contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current and a fixed gain transimpedance amplifier allowing measurement of <1mW input powers. When terminated into 50Ω into an oscilloscope, the pulsewidth of a laser can be measured. When terminated into 50Ω into a spectrum analyzer, the frequency response of a laser can be measured. EOT’s <2GHz Amplified Photodetectors come with their own wall plug-in power supply. Plugging a coaxial cable into the photodetector’s BNC output connector and terminating into 50Ω at the oscilloscope or spectrum analyzer is all that is required for operation. The ET-2030A is a Silicon (Si) based detector covering the wavelength range 300-1100nm.

Specifications:

Specifications

120-10013-0001 (ET-2030A)

120-10036-0001 (ET-3000A)

Detector Material

Silicon

InGaAs

Rise Time/Fall Time

<500 ps/<500 ps

<400 ps/<400 ps

Conversion Gain

450 V/W at 830 nm

900 V/W at 1300 nm

Power Supply

24 VDC

24 VDC

Bandwidth

30 kHz - 1.2 GHz

30 kHz - 1.5 GHz

Active Area Diameter

400 µm

100 µm

Acceptance Angle (1/2 angle)

10°

20°

Noise Equivalent Power

<60 pW/√Hz at 830 nm

<30 pW/√Hz at 1300 nm

Maximum Linear Rating

1.3 V peak

1.3V peak

Mounting (Tapped Holes)

8-32 or M4

8-32 or M4

Output Connector

BNC

BNC

 

Downloads:

Amplified Detectors datasheet

More from this collection