ET 3000A Amplified InGaAs PIN Detector

Summary Box:

EOT's 2GHz amplified InGaAs sub-nanosecond photodetectors, ideal for monitoring the output of high repetition rate, externally modulated CW lasers.

Description:

EOT’s <2GHz Amplified Photodetectors contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current and a fixed gain transimpedance amplifier allowing measurement of <1mW input powers. When terminated into 50Ω into an oscilloscope, the pulsewidth of a laser can be measured. When terminated into 50Ω into a spectrum analyzer, the frequency response of a laser can be measured. EOT’s <2GHz Amplified Photodetectors come with their own wall plug-in power supply. Plugging a coaxial cable into the photodetector’s BNC output connector and terminating into 50Ω at the oscilloscope or spectrum analyzer is all that is required for operation. The ET-3000A InGaAs detector for 800-1700nm.

Specifications:

Specifications	120-10013-0001 (ET-2030A)	120-10036-0001 (ET-3000A)
Detector Material	Silicon	InGaAs
Rise Time/Fall Time	<500 ps/<500 ps	<400 ps/<400 ps
Conversion Gain	450 V/W at 830 nm	900 V/W at 1300 nm
Power Supply	24 VDC	24 VDC
Bandwidth	30 kHz - 1.2 GHz	30 kHz - 1.5 GHz
Active Area Diameter	400 µm	100 µm
Acceptance Angle (1/2 angle)	10°	20°
Noise Equivalent Power	<60 pW/√Hz at 830 nm	<30 pW/√Hz at 1300 nm
Maximum Linear Rating	1.3 V peak	1.3V peak
Mounting (Tapped Holes)	8-32 or M4	8-32 or M4
Output Connector	BNC	BNC

 

Downloads:

Amplified Detectors datasheet

Detectors selection chart