GaAs and variants
ET 3000A Amplified InGaAs PIN Detector
EOT's 2GHz amplified InGaAs sub-nanosecond photodetectors, ideal for monitoring the output of high repetition rate, externally modulated CW lasers.
Regular price
$554.00
| Model | Wavelength range (nm) | Rise/Fall time | Bandwidth | Price | Order |
|---|---|---|---|---|---|
| ET-3000A | 800-1700nm | <400ps/<400ps | 30kHz—1.5GHz | $554.00 |
Summary Box:
EOT's 2GHz amplified InGaAs sub-nanosecond photodetectors, ideal for monitoring the output of high repetition rate, externally modulated CW lasers.Description:
EOT’s <2GHz Amplified Photodetectors contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current and a fixed gain transimpedance amplifier allowing measurement of <1mW input powers. When terminated into 50Ω into an oscilloscope, the pulsewidth of a laser can be measured. When terminated into 50Ω into a spectrum analyzer, the frequency response of a laser can be measured. EOT’s <2GHz Amplified Photodetectors come with their own wall plug-in power supply. Plugging a coaxial cable into the photodetector’s BNC output connector and terminating into 50Ω at the oscilloscope or spectrum analyzer is all that is required for operation. The ET-3000A InGaAs detector for 800-1700nm.Specifications:
|
Specifications |
120-10013-0001 (ET-2030A) |
120-10036-0001 (ET-3000A) |
|
Detector Material |
Silicon |
InGaAs |
|
Rise Time/Fall Time |
<500 ps/<500 ps |
<400 ps/<400 ps |
|
Conversion Gain |
450 V/W at 830 nm |
900 V/W at 1300 nm |
|
Power Supply |
24 VDC |
24 VDC |
|
Bandwidth |
30 kHz - 1.2 GHz |
30 kHz - 1.5 GHz |
|
Active Area Diameter |
400 µm |
100 µm |
|
Acceptance Angle (1/2 angle) |
10° |
20° |
|
Noise Equivalent Power |
<60 pW/√Hz at 830 nm |
<30 pW/√Hz at 1300 nm |
|
Maximum Linear Rating |
1.3 V peak |
1.3V peak |
|
Mounting (Tapped Holes) |
8-32 or M4 |
8-32 or M4 |
|
Output Connector |
BNC |
BNC |
